• Dongshun Bai, Xing-Fu Zhong, Rama Puligadda, Jurgen Burggraf, Daniel Burgstaller, Chris Lypka, and James Verzosa, "Edge protection of temporarily bonded wafers during backgrinding," ECS Transactions, vol. 18, no. 1, 2009, pp. 757-762.
• Darron Jurajda, Enrico Tenaglia, Jonathan Jeauneau, Danilo De Simone, Zhimin Zhu, Paolo Piazza, Paolo Piacentini, and Paolo Canestrari, "Investigation of the foot-exposure impact in hyper-NA immersion lithography when using thin anti-reflective coating," Proceedings of SPIE, vol. 7273, 2009, in press.
• J. Macie, D. Miranda, Z. Zhu, and B. Smith, "Optimizing lithographic stack materials when using hyper-NA exposure tools," Solid State Technology, vol. 52, no. 1, January 2009, pp. [online].
• Jim D. Meador, Joyce A. Lowes, Charlyn Stroud, Sherilyn Thomas, Yilin Qiu, Ramil-Marcelo L. Mercado, Victor Pham, and Mark Slezak, "Improving the performance of light-sensitive developer-soluble anti-reflective coatings by using adamantyl terpolymers," Proceedings of SPIE, vol. 7273, 2009, in press.
• Charles J. Neef, Brian Smith, Chris James, Zhimin Zhu, and Michael Weigand, "Effects of carbon/hardmask interactions on hardmask performance," Proceedings of SPIE, vol. 7273, 2009, in press.
• Carlton Washburn, April Evers, and Brian Smith, "Residue testing of developer-soluble bottom anti-reflective coatings," ECS Transactions, vol. 18, no. 1, 2009, pp. 419-425.
• Hao Xu, James M. Blackwell, Todd R. Younkin, and Ke Min, "Underlayer designs to enhance the performance of EUV resists," Proceedings of SPIE, vol. 7273, 2009, in press.
• Zhimin Zhu, Emil Piscani, Yubao Wang, Jan Macie, Charles J. Neef, and Brian Smith, "Thin hardmask patterning stacks for the 22-nm node," Proceedings of SPIE, vol. 7274, 2009, in press.

Brewer Science^® 自1981年来为微电子和光电子领域化学品及设备的领先制造者，通过不断创造革新的产品和技术Brewer Science^® 确立了他领先的竞争优势，不断革新的努力已经成为公司主要目标之一，Brewer Sciencehas在国际上拥有多项属于自己的专利技术。

U.S. Patent No. 7,455,955
Planarization method for multi-layer lithography processing

U.S. Patent No. 7,449,230
Lithography pattern shrink process and articles

U.S. Patent No. 7,364,835
Developer-soluble materials and methods of using the same in via-first dual damascene applications

U.S. Patent No. 7,364,832
Wet developable hard mask in conjunction with thin photoresist for microphotolithography

U.S. Patent No. 7,348,281
Method of filling structures for forming via-first dual damascene interconnects

U.S. Patent No. 7,323,289
Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties

U.S. Patent No. 7,316,844
Spin-on protective coatings for wet-etch processing of microelectronic substrate